| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Surface (SMD, SMT) |
| Package Name | 2-7J1B |
| Package Name | SC-64 |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 5.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 30 mOhms @ 1.3A, 4V |
| Rds On (Typ) @ Id, Vgs | 20 mOhms @ 1.3A, 4V |
| Input Capacitance (Ciss) | 370.0 pF @ 10.0 V |
| Gate Charge (Qg) | 12.00 nC @ 10.0 V |
| Power Dissipation | 20.000 W [Max] |
| Packaging | Tape & Reel |
| Rise Time | 18.00 ns [Typ] |
| Fall Time | 55.000 ns [Typ] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
|
|
| |
| 2SK2231TE16R1NQ supplier |
2SK2231TE16R1NQ Datasheet |
2SK2231TE16R1NQ specification |
2SK2231TE16R1NQ cross part |
| 2SK2231TE16R1NQ Distributor |
2SK2231TE16R1NQ stock |
2SK2231TE16R1NQ circuit diagram |
2SK2231TE16R1NQ PDF |
|
Download PDF Datasheet