| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-220AB |
| FET Type | N-Channel |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 10.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 550 mOhms @ 5A, 10V |
| Rds On (Typ) @ Id, Vgs | 400 mOhms @ 5A, 10V |
| Input Capacitance (Ciss) | 1340.0 pF @ 10.0 V |
| Gate Charge (Qg) | 34.00 nC @ 10.0 V |
| Power Dissipation | 80.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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Download PDF Datasheet