| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P(L) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 50.00 A [Nom] |
| Power Dissipation | 250.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Protection Diode(s) | Gate to Source |
| Rise Time | 105.000 ns [Typ] |
| Fall Time | 65.000 ns [Typ] |
| Vgs Min. | 2.40 V @ 1.0 mA |
| Vgs Max. | 3.40 V @ 1.0 mA |
| Drain Peak Current (Idm) | 200.000 A [Nom] |
| Operating Junction Temperature | 150 ˇăC [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SK3132 supplier |
2SK3132 Datasheet |
2SK3132 specification |
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