| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | 2-16H1B |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 30.0 V [Max] |
| Continuous Drain Current (Id) | 20.00 A [Nom] |
| Power Dissipation | 160.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Rise Time | 30.000 ns [Typ] |
| Fall Time | 50.000 ns [Typ] |
| Vgs Min. | 2.00 V @ 1.0 mA |
| Vgs Max. | 4.00 V @ 1.0 mA |
| Drain Peak Current (Idm) | 80.000 A [Nom] |
| Operating Junction Temperature | 150 ˇăC [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SK3117 supplier |
2SK3117 Datasheet |
2SK3117 specification |
2SK3117 cross part |
| 2SK3117 Distributor |
2SK3117 stock |
2SK3117 circuit diagram |
2SK3117 PDF |
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Download PDF Datasheet