| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | 2-10R1B |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 25.00 A [Nom] |
| Rds On (Max) @ Id, Vgs | 80 Ohms @ 12A, 4V |
| Rds On (Typ) @ Id, Vgs | 57 mOhms @ 12A, 4V |
| Input Capacitance (Ciss) | 1000.0 pF @ 10.0 V |
| Gate Charge (Qg) | 38.00 nC @ 10.0 V |
| Power Dissipation | 35.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SK2232FT supplier |
2SK2232FT Datasheet |
2SK2232FT specification |
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Download PDF Datasheet