| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | 2-16F1B |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 1000.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 7.00 A [Nom] |
| Power Dissipation | 90.000 W [Max] |
| Packaging | Bulk |
| Protection Diode(s) | Drain to Source |
| Rise Time | 25.000 ns [Typ] |
| Fall Time | 20.000 ns [Typ] |
| Vgs Min. | 1.50 V @ 1.0 mA |
| Vgs Max. | 3.50 V @ 1.0 mA |
| Drain Peak Current (Idm) | 21.000 A [Nom] |
| Operating Junction Temperature | 150 ˇăC [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
|
|
| |
| 2SK1365 supplier |
2SK1365 Datasheet |
2SK1365 specification |
2SK1365 cross part |
| 2SK1365 Distributor |
2SK1365 stock |
2SK1365 circuit diagram |
2SK1365 PDF |
|
Download PDF Datasheet