| Vendor | Toshiba |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-247 |
| Transistor Type | NPN |
| Collector Emitter Voltage (Vceo) | 800.0 V [Max] |
| Collector Base Voltage (Vcbo) | 900.0 V [Max] |
| Collector Current (Ic) | 5.00 A [Max] |
| Minimum DC Current Gain (hFE) @ Ic, Vce | 10 @ 1mA, 5V |
| Saturation Voltage (Vce) @ Ib, Ic | 1V @ 400mA, 2A |
| Saturation Voltage (Vbe) @ Ib, Ic | 1.3V @ 400mA, 2A |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Bulk |
| Operating Junction Temperature | 150 ˇăC [Max] |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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