| Vendor | Renesas Technology America |
| Category | Transistors, FETs, IGBTs |
| Mounting Type | Through Hole |
| Package Name | TO-3P |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 200.0 V [Nom] |
| Voltage Gate to Source (Vgs) | 20.0 V [Max] |
| Continuous Drain Current (Id) | 8.00 A [Nom] |
| Input Capacitance (Ciss) | 800.0 pF @ 10.0 V |
| Power Dissipation | 100.000 W [Max] |
| Packaging | Tube |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
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| 2SJ352E supplier |
2SJ352E Datasheet |
2SJ352E specification |
2SJ352E cross part |
| 2SJ352E Distributor |
2SJ352E stock |
2SJ352E circuit diagram |
2SJ352E PDF |
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Download PDF Datasheet