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Part No 2SJ162 
Manufacturer RENESAS TECHNOLOGY AMERICA
Description MOSFET P-CH 160V 7A TO-3P
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Detailed Specification
VendorRenesas Technology America
CategoryTransistors, FETs, IGBTs
Mounting TypeThrough Hole
Package NameTO-3P
FET TypeP-Channel
Drain to Source Voltage (Vdss)160.0 V [Nom]
Voltage Gate to Source (Vgs)15.0 V [Max]
Continuous Drain Current (Id)7.00 A [Nom]
Power Dissipation100.000 W [Max]
PackagingBulk
Protection Diode(s)Drain to Source
Protection Diode(s)Gate to Source
Delay Time On230.00 ns [Typ]
Delay Time Off110.00 ns [Typ]
Operating Junction Temperature150 ˇăC [Max]
Lead Free StatusContains Lead
RoHS StatusRoHS Non-Compliant
 
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