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Part No FDN5618P 
Manufacturer FAIRCHILD SEMICONDUCTOR
Description MOSFET P-CHAN 60V 1.25A SSOT3
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Detailed Specification
VendorFairchild Semiconductor
CategoryTransistors, FETs, IGBTs
Mounting TypeSurface (SMD, SMT)
Package NameSuperSOT?-3
FET TypeP-Channel
Drain to Source Voltage (Vdss)60.0 V [Nom]
Voltage Gate to Source (Vgs)20.0 V [Max]
Continuous Drain Current (Id)1.25 A [Nom]
Input Capacitance (Ciss)430.0 pF @ 30.0 V
Gate Charge (Qg)8.60 nC @ 10.0 V
Power Dissipation500.000 mW [Max]
PackagingTape & Reel, 7"
Protection Diode(s)Drain to Source
Delay Time On6.50 ns [Typ]
Delay Time Off16.50 ns [Typ]
Rise Time8.00 ns [Typ]
Fall Time4.000 ns [Typ]
Vgs Min.1.00 V @ 250.0 ?A
Vgs Max.3.00 V @ 250.0 ?A
Drain Peak Current (Idm)10.00 A [Nom]
Operating Junction Temperature-55 ˇăC [Min]
Operating Junction Temperature150 ˇăC [Max]
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
 
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